Sr. GaN Device Engineer

Job Description Job Description Sr. GaN Device Engineer Job Title: Sr. GaN Device Engineer Location: Somerville, MA - will provide relocation assistance! Compensation: $150K - $250K DOE Requirement: MS or PhD w/ 5 years of Gallium Nitride (GaN) or wide bandgap semiconductor device design Position Overview We are seeking a skilled GaN Device Engineer to join our innovative team. The ideal candidate will be responsible for the design, modeling, and development of Gallium Nitride (GaN) semiconductor devices, focusing on enhancing performance and efficiency in power applications. Key Responsibilities Design and develop Gallium Nitride (GaN) semiconductor devices for various applications. Perform device modeling and simulation to predict performance characteristics. Collaborate with cross-functional teams to integrate GaN devices into larger systems. Conduct experiments and tests to validate device performance and reliability. Stay updated on industry trends and advancements in wide bandgap...