Job Description

Responsibilities

  • Device Characterization: Define on-wafer and packaged device characterization plans, including DC, capacitance-voltage (CV), small-signal RF (S-parameters), noise, and large-signal measurements (e.g., load-pull, pulsed I-V).

  • Model Development & Extraction: Develop and refine accurate, physics-based compact models for GaN HEMTs using industry-standard modeling tools and techniques (e.g., MVSG, ASM-HEMT, Angelov).

  • Simulation & Validation: Utilize TCAD and circuit simulation tools (e.g., Keysight ADS, Cadence AWR/Spectre, Synopsys, Silvaco) to perform simulations, analyze data, and validate model accuracy against hardware measurements.

  • PDK Development: Collaborate with the PDK Team and provide support for both internal and external customers.

  • Cross-Functional Collaboration: Work closely with process engineers to link device performance to fabrication parameters, with reliability ...
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